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ON Semiconductort
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max -30 -50 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc A
MMBT589LT1
30 VOLTS 2.0 AMPS PNP TRANSISTOR
3 1 2
DEVICE MARKING
MMBT589LT1 = G3
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 Symbol PD (1) Max 310 2.5 RqJA (1) PD (2) 403 710 5.7 RqJA (2) PDsingle (3) 575 TJ, Tstg -55 to +150 C 176 Unit mW mW/C C/W mW mW/C C/W mW
(c) Semiconductor Components Industries, LLC, 2001
1
August, 2001 - Rev. 1
Publication Order Number: MMBT589LT1/D
MMBT589LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -30 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) V(BR)CEO -30 V(BR)CBO -50 V(BR)EBO -5.0 ICBO - ICES - IEBO - -0.1 -0.1 mAdc -0.1 mAdc - mAdc - Vdc - Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (1) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) Collector-Emitter Saturation Voltage (1) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) Base-Emitter Saturation Voltage (1) (Figure 2) (IC = -1.0 A, IB = -0.1 A) Base-Emitter Turn-on Voltage (1) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 80 40 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cobo - - 15 pF -1.1 MHz -1.2 V -0.25 -0.30 -0.65 V - 300 - - V
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MMBT589LT1
200 VCE = -2.0 V h FE , DC CURRENT GAIN 150 230 210 h FE , DC CURRENT GAIN 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 -55C 25C 125C VCE = -1.0 V
100
50
100
1000
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus Collector Current
1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5
Figure 2. DC Current Gain versus Collector Current
IC/IB = 10
IC/IB = 100
1000
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. "On" Voltages
Figure 4. Base Emitter Saturation Voltage versus Collector Current
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100
1000
VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS)
1.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage versus Collector Current
Figure 6. Collector Emitter Saturation Voltage versus Collector Current
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MMBT589LT1
10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25C 1s 100 ms 10 ms 1 ms 100 ms
1.0
2s 0.1
0.01
0.1
1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
Figure 7. Safe Operating Area
0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1
1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
Figure 8. Normalized Thermal Response
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MMBT589LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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MMBT589LT1
PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AH
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
A L
3 1 2
BS
V
G C D H K J
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
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MMBT589LT1
Notes
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MMBT589LT1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MMBT589LT1/D

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